Dredging Corporation of India Ltd. jobs for Management Trainees in Visakhapatnam
Post date: 31-05-2015
Last date: 29-06-2015
Qualification: B.E/B.Tech in various disciples
How to apply: Interested candidates should apply online
View more details
BEL recruiting Engineers in Chennai
Post date: 31-05-2015
Last date: 12-06-2015
Qualifications:B.E/B.Tech in Civil, Computer Science, Electrical, Electrical & Electronics, Electronics, Electronics & Communication, Electronics & Telecommunication, Mechanical, Telecommunication, Communication
How to apply : interested candidates should apply online
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BSNL Management trainee Telecom operator syllabus
The written exam comprises into three sections with a duration of 3 hours
Section 1: Management aptitude (150 marks)
Section 2: Cognitive ability(150 marks)
Section 3: Technical knowledge(150 marks)
Section I- Management Aptitude
This section should gauge the ability of candidates on key management subjects such as
economics, finance knowledge, operations, HR science etc. The syllabus for this section is
as follows:
1. General Management
2. Management Information Systems
3. Managerial economics
4. Marketing
5. Accounting and Finance
6. Human Resources Management
7. Organizational Behavior
8. Strategic Management
9. Operations Management
10. Telecom knowledge
11. Current events of national and international importance
Section II – Cognitive Ability
This section should gauge overall cognitive ability of the candidate on parameters such as
logical reasoning, verbal reasoning, reading & analysis etc. The syllabus for this section is
as follows:
1. Quantitative ability & data sufficiency
2. Reasoning (e.g. analytical, logical, critical reasoning)
3. Verbal ability, reading comprehension and analysis
Section III- Technical knowledge
Syllabus for Telecom Operations stream:
1. Materials and Components
2. Physical Electronics, Electron Devices and ICs
3. Signals and Systems
4. Network theory
5. Electromagnetic Theory
6.Electronic Measurements and Instrumentation
7. Analog Electronic Circuits
8. Digital Electronic Circuits
9. Control Systems
10. Communication Systems
11. Microwave Engineering
12. Computer Engineering
13. Power Electronics.
BSNL Management trainee books with practice papers
tags: Bsnl management trainee external syllabus, telecom operator cutoff,sample papers,previous papers
IC Resource ltd jobs-Semiconductor Foundry Engineer - Japan
Post date: 18-05-2015
Last date: as soon as possible
Qualifications:
Semiconductor IC foundry product experience -Device knowledge
- Yield Analysis knowledge
- Excellent communication skills (Japanese and English)
-BSc Degree in Electronics / Physics or equivalent qualifications
How to apply: Candidates should Apply Online
Apply online
Vizag steel plant Management trainee Electronics 2013 question paper
Vizag steel plant 2015 management trainees recruitment
Post date: 12-05-2015
Last date: 26-05-2015
Qualifications:
- First class in B.E / B.Tech in engineering electrical,electronics,instrumentation..
How to apply: Candidates should Apply Online latest by 26-05-2015
Apply online
@@ Vizag steel plant MT syllabus @@
BEL PE 1998 and 2003 electronics previous year question paper
JNTUK 2015 Proposed Academic Calendar B.Tech / B.Pharm III year (2013 Admitted Batch) R13
Tags: JNTU kakinada updates, academic calender 2015, R13 batch syllabus
JNTUK Academic Calendar for the B.Tech / B.Pharm IV year (2012 Admitted Batch)
Eceway tags: Jntuk updates, academic calender 2015, R10 syllabus
BEL PE Electronics Previous questions from 2008 questionpaper
2. Poles & zeroes are at .01,1,20,100...... find phase margin/angle at f=50Hz. ans -90(By drawing bode plot)
3. In n-type enhancement mode MOSFET drain current———– options are-increase/decrease with inc/dec in drain/gate voltage. ans(d)
4. Gain of an directional antenna 6db P=1mw find transmitted power.........(use Ptr=G * P.)
5. Multiplication of two nos 10101010 & 10010011 in 2’s complement form..
6. A ckt is given suppplied with 15v with a series of resistance of 1k and a parallel combination of 12V zener diode and 2k resistance. FInd current through 2k resistance.
Ans: 6mA
7.A MP has 16 line data bus & 12 line addr bus find memory range..........Ans..4K(4*1024bytes)
8.Divide by 12 counter require minimum ..... no of flip flops Ans. 4
9.Storage time in p-n junction.
10.Succesive approx. use in .... Ans ADC(analog to digital)
11.Pre-emphasis require in ......... low freq/high freq signal.
12.Handshake in MP ........... Ans to communicate with slower peripherals.
13. Binary equivalent of 0.0625 Ans. 0.0001
14.Which code is self complement of itself
15.Excess three code of an given binary no.
16.When we add 6 in BCD operations....... Ans. if result exceed valid BCD nos.
17.Shottky diode has better switching capability because it switch between.......
18.Figure of Merit is same as......
19.Swithcing in diode happens when....
20.During forward bias majority charge conc. in depletion layers inc/decrease.....
21.Channel capacity depend on....... Ans. Usable frequency or bandwidth
22.A 2kHz signal is passed through an Low pass filter having cut-off freq 800Hz o/p
will be
23. Carrier amplitude 1v, peak to peak message signal 3mv find modulation index.
24.A 12V signal is quantized into two V/14 & 6 equal V/7 determine quantization error.
Part II True & false......(10 1 mark each) with 50% -ve marking
1.Power dissipation in ECL is minimum.......... False
2.Fourier Transform of a symmetric conjugate function is always real .... True
3.Divide by 12 counter requires a minimum of 4 flip flops.......True
4.Boron can be use as impurity to analyse base of a npn transistor.......True
Other Question Placement Paper :
1) in analog question based on zener diode
2) coupling capacitors and bypass capacitors affect
3) 1,8,27,64,125, ..........,.......
which among the following will not come in the series
a.1000, b.729 c.259
4) which of the following game uses bulley
a.football
b.cricket
c.goalf..
d.hockey
5) a zener diode works on the principle of
6)under the high electric field,in a semiconductor with increasing electric field
7)in an 8085,microprocessor system with memory mapped I/O
8)built-in potential in a p-n jn.-
9)the breakdown voltage of a transitor with its base open is BV(ceo) and that with
emitter open BV(cbo) then
10) ques based on half adder
11) based on flip flop
12) block diagram reduction
13) to find max overshoot (2 ques based on it)
BEL Probationary engineer(PE) electronics 2015 model paper
a. 50 b. 1012 c. 230k d. 10-6
2. Rsistivity of Germanium in ohms cm. is approx. equal to
a. 50 b. 10-12 c. 50k d. 10-6
3. The number of free electrons/cubic cm intrinsic Germanium at room temperature is
approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106
4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is
approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106
5. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV
6. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV
7. N type material is formed by the addition of the following (penta valent )atom in n
to semiconductor material
a. Antimony
b. Arsenic
c. Phosphorous
d. Any of the above
8. P type material is formed by the addition of the following [Trivalent] atom tn to
semiconductor material
a. Boron b. Gallium c. Indium d. Any of the above
9. Impurity atoms that produces N type material by its addition in semiconductor is
called
a. Donar b. Acceptor c. Conductor d. Insulator
10. Impurity atoms that produces P type material by its addition in semiconductor is
called
a. Donar b. Acceptor c. Conductor d. Insulator
11. Dynamic resistance of a diode Rd is if voltage changes is DVd and the current
change is D Id
a. D Vd / D Id
b. D Id / D Vd
c. 1 / DVd
d. 1 / D Id
12. Point contact diodes are preferred at very high frequency, because of its low
junction
a. Capacitance and inductance
b. Inductance
c. Capacitance
13. Identify the circuit given below
a. AND gate
b. OR gate
c. Rectifier
d. NOR gate
14. Identify the circuit given below
a. AND gate
b. OR gate
c. Rectifier
d. NOR gate
15. DC value of a Half wave rectifier with Em as the peak value of the input is
a. 0.318Em
b. 0.418Em
c. 0.518Em
d. 0.618Em
16. Change in Zener voltage of 10V at 100o C if temperature co-efficient is 0.072%o
C as
a. 0.54 V b. 0.74 V c. 0.64 V d. 0.14 V
17. If Tc is th e% temperature co of / oC and Vz as zener voltage and T as change in
temperature then the change in zener voltage is
a.
b.
c. 100. Vz. Tc DT
d. None of these of the above
18. PIV for a full wave rectifier, if Em is the peak voltage is
a. Em b. 1.5Em c. 0.636Em d. 2Em
19. Schottky Barrier diodes becomes important at
a. DC level operation
b. Low frequency operation
c. High frequency operation
d. None of these
20. Clamping network is the one that will clamp the signal to a
a. Different peak value
b. Different DC level
c. Different polarity level
d. Different RMS level
21. Clipping network is the one that will clip a portion of the
a. Input signal without distorting the remaining portion
b. Input signal with distorting the remaining portion
c. Any of the above
d. None of these
22. Transition capacitance Ct of a Varicap diode with Knee voltage Vt, reverse
voltage Vr and K, the constant based on semiconductor material and the construction
technique & N dependent on type of junction is given by
a. 1 / K (Vt + Vr)N/2
b. 1 / K (Vt + Vr)N
c. K / (Vt + Vr)N
d. K / (Vt + Vr)1/N
23. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing
dependent constant and N dependent on type of junction, for alloy junction the value
of N is
a. 1/3 b. 2/3 c. 1/2 d. 1/4
24. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing
dependent constant and N dependent on type of junction, for diffused junction the
value of N is
a. 1/3 b. 2/3 c. 1/2 d. 1/4
25. In JFET, the drain current Id is given by (Idss drain – source saturation current
Vgs – Gate – source voltage, Vp the pinch off voltage)
a. Idss[1 – Vp/Vgs]
b. Idss(1 – Vgs/Vp)2
c. Idss[1 – Vgs/Vp)
d. Idss(1 – Vgs/Vp)3/2
26. The shadow mask in colour tube is used to
a. Reduce X-Ray emission
b. Ensure each beam hits its own dots
c. Increase screen brightness
d. Provide degaussing for the screen
27. Indicate which of the following signal is not transmitted in colour TV
a. Y b. Q c. R d. I
28. Another name for horizontal retrace in TV receiver is the
a. Ringing b. Burst c. Damper d. Fly back
29. Another name for the colour sync in the colour TV system
a. Ringing b. Burst c. Damper d. Fly back
30. The HV anode supply for a picture tube of a TV receiver is generated in the
a. Mains transformer
b. Vertical output stage
c. Horizontal output stage
d. Horizontal oscillator
31. The output of vertical amplifier is
a. Direct current
b. Amplified vertical sync pulse
c. A saw tooth voltage
d. A saw tooth current
32. In a transistor if Alpha = 0.98, current gain is equal to
a. 29 b. 59 c. 69 d. 49
33. The active region in the common emitter configuration means
a. Both collector and emitter junction is reverse biased
b. The collector junction is forward biased and emitter junction
c. The collector junction is reverse biased and emitter junction is forwared biased
d. Both collector & emitter junction are forward biased
34. The saturation region in the common emitter configuration means that
a. Both collector & emitter junction are reverse biased
b. The collector junction is forward biased and emitter junction
c. The collector junction is reverse biased and emitter junction is forwared biased
d. Both collector & emitter junction are forward biased
35. The % of Red, Green & Blue in 100% White Y is given by
a. 30%, 59%, 11%
b. 50%, 30%, 11%
c. 30%, 11%, 50%
d. 33.3%, 33.5%, 38.3%
36. Equalizing pulse width, if H is the Horizontal sync rate
a. 0.64 H b. 0.07 H c. 0.04 H d. 0.16 H
37. In a simple RC network the bandwidth is equal to
a. 1/2 p RC
b. RC / 2
c. 2 C / p R
d. 2 p / RC
38. The time constant of a RC network is given by
a. RC b. C/R c. R/C d. None of these
39. First zero crossing of pulse frequency spectrum occurs at if d is the pulse width, T
is the pulse repetition rate
a. 1/d b. d/T c. T/d d. T
40. The distortion less output characteristic of a network means
a. Constant amplitude and linear phase shift over frequency
b. Linear phase shift and amplitude need not be constant
c. Any amplitude and phase
d. None of these
41. Single sideband means suppressed
a. Carrier
b. Carrier and one side band
c. One side band
d. None of these
42. In an amplitude modulated signal, lower side band frequency is equal to (if the
carrier frequency is fc and modulation frequency is fm)
a. fm + fc b. fc – fm c. fm r fc d. fc / fm
43. Modulation index of the frequency modulation depends on
a. Amplitude & frequency of the modulation signal
b. Frequency and amplitude of carrier signal
c. Carrier frequency
d. None of these
44. The BW of the narrow band FM if modulating frequency is fm
a. 3 r fm b. 2 r fm c. 2.5 r fm d. 10 r fm
45. Reactance tube modulator is known for
a. FM b. AM c. PPM d. PAM
46. Bandwidth and rise time product is
a. 0.35 b. 0.45 c. 0.30 d. 0.49
47. Energy gap, Lg, for Germanium at room temp [300o K] is
a. 0.72eV b. 1.1eV c. 1.53eV d. 0.2eV
48. Volt equivalent of temperature VT, at 116o K is
a. 0.11V b. 0.01V c. 1.16V d. 0.1V
49. Reverse saturation current of a Ge.diode is in the range of
a. mA b. uA c. nA d. pA
50. Cut-in voltage V for silicon is approximately
a. 0.2V b. 0.6V c. 0.9V d. 1.1V
51. Every 10o C rise in temp. the reverse saturation current
a. Doubles
b. Halves
c. Triples
d. No change
52. Hall effect with reference to Metal or Semiconductor carrying a current I is
placed in a transverse magnetic field B, an electric field E is induced in
a. Parallel to B
b. Perpendicular to I
c. Perpendicular to both B & I
d. Perpendicular to B
53. 1 eV (electron volt) is equal to:
a. 1.9 r 10-20 J
b. 1.6 r 10-19 J
c. 1.6 r 10-20 J
d. 1.16 r 10-19 J
54. Donar impurity is having a valency of:
a. 2 b. 3 c. 4 d. 5
55. Acceptor impurity is having a valency of
a. 2 b. 3 c. 4 d. 5
56. Electron volt arises from the fact that if any electron falls through a potential of 1
volt, its kinetic energy will
a. Decrease, & potential energy will increase
b. Increase & potential energy decrease
c. Be unaltered & potential energy decreases
d. Increase & potential energy increase
57. Hole is created in a semiconductor material if one of following impurities are
added
a. Antimony
b. Arsenic
c. Indium
d. Phosphorus
58. Excess electron is created by
a. Boran
b. Gallium
c. Indium
d. Arsenic
59. A snubber circuit is used across the SCR to protect against
a. The di/dt of the anode current
b. The dv/dt turn on
c. L.di/dt of load inductance
d. None of these
60. Germanium has the valency of
a. 2 b. 3 c. 4 d. 5
61. Silicon has the valency of
a. 2 b. 3 c. 4 d. 5
62. Hole acts as a free charge carrier of polarity
a. Negative
b. Positive
c. Neutral
d. None of these
63. Burst signal in NTSC system is 8 cycles of the frequency of
a. Colour sub carrier
b. Picture carrier
c. Sound carrier
d. None of these
64. Colour sub carrier reference burst is superimposed on the
a. Back porch of the each horizontal sync pulse
b. Front porch of the each horizontal sync pulse
c. Front porch of the each vertical sync pulse
d. Back porch of the each vertical sync pulse
65. The law of mass action with reference to semiconductor technology states that the
product of free negative & positive concentration is a constant and
a. Independent of amount of donor and acceptor doping
b. Dependent on amount of donor and independent of the amount acceptor impurity
doping
c. Depend on amount of both donor & acceptor impurity doping
d. None of these
66. The snubber circuit used across SCR is a simple
a. R-L network
b. RLC network
c. LC network
d. RC network
67. To limit the rate of rise of SCR anode current a small
a. Inductor is inserted in cathode circuit
b. Inductor is inserted in anode circuit
c. Capacitor is inserted in anode circuit
d. Capacitor is inserted in cathode circuit
68. Torque developed by a DC servo motor is proportional to the
a. Product of power and time
b. Product of armature current and back emf
c. Armature voltage and armature current
d. Field voltage and field current
69. Proportional Integral control
a. Reduces steady state error but reduces the forward gain
b. Increases the forward gain and reduces the steady state error
c. Increases the steady state error and increases the forward gain
d. None of these
70. Increasing the servo bandwidth:
a. Improves signal to noise ratio
b. Improves speed response and lowers signal to noise ratio
c. Improves power output
d. None of these
71. Notch filter is
a. Low pass filter
b. High pass filter
c. Narrow stop band filter
d. Narrow pass band filter
72. In TV Receivers the Electron beam deflection method used is
a. Electro static
b. Electro magnetic
c. Magnetic
d. All the above
73. In a line of sight communication the maximum range R in miles between the
receiver antenna and transmitter antenna of height H in feet is approximately
a. R = 1.93 ÖH
b. R = 1.23 ÖH
c. R = 1.53 ÖH
d. R = 2.03 ÖH
74. In wavelength of the 60 MHz carrier frequency is
a. 10 metres
b. 15 metres
c. 5 metres
d. 2.5 metres
75. In standard TV receiving antenna the dipole element is
a. 0.5 of the wave length
b. 0.25 of the wave length
c. 1.5 of the wave length
d. 1.0 of the wave length
76. The characteristics of FET are similar to:
a. Triode
b. Tertode
c. Pentode
d. Diode
77. Charge coupled device is an array of capacitors whose structure is similar to:
a. Shift register
b. Flip-flop
c. NAND gate
d. Amplifier
78. Operational amplifier characteristics are which of the following:
a. Infinite gain
b. Infinite input impedance
c. Output impedance is zero
d. All of the above
79. The typical value of the open loop gain in dB of an amplifier at DC with no
feedback is:
a. 90 to 100
b. 80 to 90
c. 0 to 50
d. 50 to 70
80. The 3 dB band width means the frequency at which
a. The open loop voltage gain reduced to 0.707
b. The open loop gain reduced to unity
c. Maximum voltage of a signal is without distortion
d. It is a medium wave band width of radio receiver
81. Rise time of an amplifier is defined as time required
a. To change from 0 to 100 % of its final value
b. To change from 0 to 50 % of its final value
c. To change from 10 to 90 % of its final value
d. To change from 10 to 100 % of its final value
82. High speed amplifier design emphasized on
a. Extremely small bandwidth
b. Very slow response
c. Unity gain bandwidth after 10 MHz
d. None of these
83. Tuned amplifier having the frequency range between
a. 150 KHz – 50 MHz
b. 100 Hz – 100 KHz
c. 100 KHz – 120 KHz
d. 50 MHz – 100 MHz
84. The resonance frequency of a tuned circuit made up of R, L, C is given by
a. 1/2 pÖLC
b. 2 pÖLC
c. 2 p / ÖLC
d. ÖLC / 2
85. The voltage follower can be obtained using operational amplifier
a. Without any feedback
b. Series parallel feedback of unity
c. Parallel feedback
d. Series feedback
86. Fidelity of the amplifier is when
a. It is a linear amplifier
b. It does not add or subtract any spectral components
c. It amplifier each component by the same amount
d. All of the above
87. What would be the output when two input sine waves of frequency 50 KHz and
100 KHz passed through an amplifier in the medium signal
a. 50 KHz and 100 KHz
b. 100 KHz and 200 KHz
c. 50 KHz and 150 KHz
d. All of the above
88. The important application of Schmitt trigger is
a. To convert slowly varying input voltage to abrupt voltage change
b. To convert abruptly varying input voltage into slowly varying output
c. To change the frequency of the input
d. None of these
89. Meaning of decoding is
a. Binary addition
b. Data transmission
c. Demultiplexing
d. Storage of binary information
90. Approximately how many number of gates are incorporated in SSL chip
a. 12
b. 100
c. Excess of 100
d. Excess of 1000
91. The circuit diagram represents which one of the following
a. Half adder
b. Full adder
c. Exor gate
d. AND gate
92. Flip flop cannot be called as
a. Bistable multivibrator
b. 1 Bit memory unit
c. latch
d. combinational circuit
93. The important use of low pass filter in power supply is
a. To get the regulation in the output voltage
b. To filter out the ripple frequency
c. To increase the current rating
d. To convert AC into DC
94. Binary equivalent of the decimal number 145 is
a. 10010001
b. 1001011
c. 1010001
d. 1100010
95. In which of the following gate the output will be high when all the maintained at
high level
a. NOR
b. AND
c. NAND
d. EXOR
96. Which of the following definition is true in the De Morgan’s theorem
a. Multiplication symbols are replaced by addition symbol
b. Addition symbols are replaced by Multiplication symbol
c. Each of the terms are expressed in the complementary form
d. All of the above
97. 8421/BCD code fro a decimal number 149 is
a. 0001 0100 1001
b. 10010101
c. 10101001
d. None of these
98. Combinational circuit are mainly characterized by
a. Output depends upon the previous state & presents state
b. Output depends upon the input at that particular instant
c. Output depends upon the presents state & the clock state
d. Output does not depends upon the input at all
99. A flip flop is defined as
a. A bistable device with two complementary outputs
b. It is memory element
c. It will respond to input and it is a basic memory element
d. All of the above
100. Four bit code is called
a. Nibble
b. Byte
c. Word
d. Register
Answer:-
1. c
2. a
3. a
4. b
5. a
6. b
7. d
8. d
9. a
10. b
11. a
12. c
13. b
14. a
15. a
16. a
17. a
18. d
19. c
20. b
21. a
22. c
23. c
24. a
25. b
26. b
27. c
28. d
29. b
30. c
31. d
32. d
33. c
34. d
35. a
36. c
37. a
38. d
39. a
40. a
41. b
42. b
43. a
44. b
45. b
46. a
47. a
48. b
49. b
50. b
51. a
52. c
53. b
54. b
55. b
56. b
57. c
58. d
59. b
60. c
61. c
62. b
63. a
64. a
65. a
66. d
67. b
68. b
69. a
70. b
71. c
72. c
73. b
74. c
75. a
76. c
77. a
78. d
79. d
80. a
81. c
82. c
83. a
84. a
85. b
86. d
87. a
88. a
89. c
90. a
91. a
92. d
93. b
94. a
95. b
96. d
97. a
98. b
99. d
100.a
tags: BEl previous papers, BEL pe exam 2015, notifications,ece syllabus for PE
BEL India Probationary Engineer Recruitment 2015 Apply Online
Post date: 05-05-2015
Last date: 14-05-2015
Qualifications:
- First class in B.E / B.Tech / B.Sc Engineering Graduate from AICTE approved Colleges in Electronics / Electronics and Communication / Electronics & Telecommunication / Communication / Telecommunication / Mechanical / Civil/ Electrical /Electrical & Electronics / Computer Science / Computer Science and Engineering.
- Candidates with first class in AMIE / AMIETE, in the above disciplines are also eligible to apply. SC/ST/PWD candidates with pass class in the above degree / disciplines are eligible to apply.
How to apply: Candidates should Apply Online latest by 14-05-2015
Apply online
Bharat Sanchar Nigam Ltd. (BSNL) jobs for the post of Management Trainee Telecom Operators
Post date: 05-05-2015
Last date: 14-06-2015
Qualifications:
Bachelor of Engineering/ Bachelor of Technology degree or equivalent engineering in any of the following disciplines with minimum 60% marks (55% for SC/ST candidates) and should have completed the course on a regular full time basis on the last date of applications.
1. Telecommunications, 2. Electronics, 3. Computer/ IT, 4. Electrical.
PLUS
MBA (or its equivalent from recognized/ reputed Indian Institute/ University recognized under Indian Law or M.Tech.
How to apply:
Candidates should Apply Online latest by 14-06-2015
Click here for more details
Gulbarga Electricity Supply Company Ltd. (GESCOM) jobs for Assistant Engineer/Junior Engineer in Gulbarga.
Post date: 05-05-2015
Last date: 15-05-2015
Qualifications: Assistant Engineer (El) - Electrical/Electrical and Electronics Engineering./Computer Science/Information Science/Information Technology Engineering /Electronics and Telecommunication / Electronics communication Engineering-
Qualification : Should possess/acquire B.E. of a recognized University or AMIE (India) qualification in a) Electrical/Electrical and Electronics Engineering. b) Computer Science/ Information Science/ Information Technology Engineering. c) Electronics and Telecommunication / Electronics communication Engineering.
How to apply:
Applications Candidate should apply Online before 15/05/2015
Click here for more details
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